Spin-splitting in p-type Ge devices

Confinement-Enhanced Valley Splitting for Spin-Driven Silicon Devices

cohesion and cohesive devices in a contrastive analysis between ge and esp texts

the present study was an attempt to conduct a contrastive analysis between general english (ge) and english for specific purposes (esp) texts in terms of cohesion and cohesive devices. to this end, thirty texts from different esp and ge textbooks were randomly selected. then they were analyzed manually to find the frequency of cohesive devices. cohesive devices include reference, substitution, ...

Spin Hall Effect in P-type Semiconductors

The spin Hall effect is a phenomenon of inducing spin current by an external electric field. We recently proposed that this effect can occur in p-type semiconductors without relying upon any disorder scattering [S. Murakami et al., Science 301, 1348 (2003)]. This intrinsic effect is due to the “Berry phase in momentum space”, representing topological structure of the Bloch band structure. We ex...

Optical spin injection and spin lifetime in Ge heterostructures.

We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge allows us to achieve high spin polarizations and to resolve the spin dynamics of holes and electrons. The circular polarization degree of the direct gap photoluminescence exceeds the theoretical bulk limit, yielding ∼37% a...

Rashba-type spin splitting and spin interference of the Cu(111) surface state at room temperature

We report on the measurement of the Rashba-type spin splitting of the Shockley surface state on Cu(111) by spinand angle-resolved photoemission at room temperature. Along the spatial direction expected for a Rashba-type effect the measured spin splitting corresponds to what has previously been reported by first principle calculations which were verified by high resolution ARPES using low temper...